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Thermal stability of InP-based high electron mobility transistor epitaxial wafers
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10.1063/1.1560572
/content/aip/journal/jap/93/7/10.1063/1.1560572
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/7/10.1063/1.1560572
/content/aip/journal/jap/93/7/10.1063/1.1560572
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/content/aip/journal/jap/93/7/10.1063/1.1560572
2003-03-21
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of InP-based high electron mobility transistor epitaxial wafers
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/7/10.1063/1.1560572
10.1063/1.1560572
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