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Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry
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10.1063/1.1623630
/content/aip/journal/jap/94/10/10.1063/1.1623630
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/10/10.1063/1.1623630
/content/aip/journal/jap/94/10/10.1063/1.1623630
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/content/aip/journal/jap/94/10/10.1063/1.1623630
2003-10-31
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/10/10.1063/1.1623630
10.1063/1.1623630
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