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Defect relaxation at the origin of reduction in mobile proton generation at interfaces during annealing in
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10.1063/1.1606865
/content/aip/journal/jap/94/12/10.1063/1.1606865
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/12/10.1063/1.1606865
/content/aip/journal/jap/94/12/10.1063/1.1606865
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/content/aip/journal/jap/94/12/10.1063/1.1606865
2003-12-02
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect relaxation at the origin of reduction in mobile proton generation at Si/SiO2/Si interfaces during annealing in H2
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/12/10.1063/1.1606865
10.1063/1.1606865
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