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Formation of misfit dislocations in strained-layer heterostructures during postfabrication thermal processing
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10.1063/1.1627463
/content/aip/journal/jap/94/12/10.1063/1.1627463
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/12/10.1063/1.1627463
/content/aip/journal/jap/94/12/10.1063/1.1627463
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/content/aip/journal/jap/94/12/10.1063/1.1627463
2003-12-02
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of misfit dislocations in strained-layer GaAs/InxGa1−xAs/GaAs heterostructures during postfabrication thermal processing
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/12/10.1063/1.1627463
10.1063/1.1627463
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