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Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire
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10.1063/1.1628833
/content/aip/journal/jap/94/12/10.1063/1.1628833
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/12/10.1063/1.1628833
/content/aip/journal/jap/94/12/10.1063/1.1628833
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/content/aip/journal/jap/94/12/10.1063/1.1628833
2003-12-02
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/12/10.1063/1.1628833
10.1063/1.1628833
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