1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Effects of plasma nitridation of interlayer on thermal stability, fixed charge density, and interfacial trap states of gate dielectric films grown by atomic layer deposition
Rent:
Rent this article for
USD
10.1063/1.1590418
/content/aip/journal/jap/94/3/10.1063/1.1590418
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/3/10.1063/1.1590418
/content/aip/journal/jap/94/3/10.1063/1.1590418
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/94/3/10.1063/1.1590418
2003-07-18
2014-12-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/3/10.1063/1.1590418
10.1063/1.1590418
SEARCH_EXPAND_ITEM