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Thermal annealing effects on the structural and electrical properties of gate dielectric stacks grown by atomic layer deposition on Si substrates
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10.1063/1.1590414
/content/aip/journal/jap/94/4/10.1063/1.1590414
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/4/10.1063/1.1590414
/content/aip/journal/jap/94/4/10.1063/1.1590414
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/content/aip/journal/jap/94/4/10.1063/1.1590414
2003-07-29
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/4/10.1063/1.1590414
10.1063/1.1590414
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