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Boron and phosphorus diffusion in strained and relaxed Si and SiGe
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10.1063/1.1602564
/content/aip/journal/jap/94/6/10.1063/1.1602564
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/6/10.1063/1.1602564
/content/aip/journal/jap/94/6/10.1063/1.1602564
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/content/aip/journal/jap/94/6/10.1063/1.1602564
2003-08-29
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Boron and phosphorus diffusion in strained and relaxed Si and SiGe
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/6/10.1063/1.1602564
10.1063/1.1602564
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