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Effect of deposition conditions of poly films and Ge atoms on the electrical properties of poly gate stack
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10.1063/1.1605257
/content/aip/journal/jap/94/7/10.1063/1.1605257
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/7/10.1063/1.1605257
/content/aip/journal/jap/94/7/10.1063/1.1605257
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/content/aip/journal/jap/94/7/10.1063/1.1605257
2003-09-17
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of deposition conditions of poly Si1−xGex films and Ge atoms on the electrical properties of poly Si1−xGex (x=0,0.6)/HfO2 gate stack
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/7/10.1063/1.1605257
10.1063/1.1605257
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