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X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism
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10.1063/1.1618357
/content/aip/journal/jap/94/9/10.1063/1.1618357
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/9/10.1063/1.1618357
/content/aip/journal/jap/94/9/10.1063/1.1618357
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/content/aip/journal/jap/94/9/10.1063/1.1618357
2003-10-23
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism
http://aip.metastore.ingenta.com/content/aip/journal/jap/94/9/10.1063/1.1618357
10.1063/1.1618357
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