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Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001)
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10.1063/1.1638890
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    Affiliations:
    1 Laboratoire d’Étude des Nanostructures Semiconductrices, INSA-Rennes, 20 Avenue des Buttes de Coesmes, CS 14315, 35043 Rennes Cedex, France
    2 Laboratoire de Physique de la Matière Condensée (UMR-CNRS 5511), INSA-Lyon, Bâtiment Blaise Pascal, 7 Avenue J. Capelle, 69621 Villeurbanne, France
    3 Institut d’Électronique Fondamentale, UMR 8622 CNRS, Université Paris-Sud, 91405 Orsay, France
    4 Laboratoire d’Électronique, Nanotechnologies et Capteurs, Université Lyon I, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne, France
    5 Laboratoire d’Électronique, Optoélectronique et Microsystèmes, (UMR-CNRS 5512), École Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully, France
    J. Appl. Phys. 95, 1074 (2004); http://dx.doi.org/10.1063/1.1638890
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/content/aip/journal/jap/95/3/10.1063/1.1638890
2004-01-20
2014-11-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/3/10.1063/1.1638890
10.1063/1.1638890
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