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Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates
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10.1063/1.1637707
/content/aip/journal/jap/95/4/10.1063/1.1637707
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/4/10.1063/1.1637707
/content/aip/journal/jap/95/4/10.1063/1.1637707
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/content/aip/journal/jap/95/4/10.1063/1.1637707
2004-01-30
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/4/10.1063/1.1637707
10.1063/1.1637707
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