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Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress
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10.1063/1.1640790
/content/aip/journal/jap/95/4/10.1063/1.1640790
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/4/10.1063/1.1640790
/content/aip/journal/jap/95/4/10.1063/1.1640790
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/content/aip/journal/jap/95/4/10.1063/1.1640790
2004-01-30
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/4/10.1063/1.1640790
10.1063/1.1640790
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