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Effectiveness of buffer layer in epitaxial growth on MgO substrate: A first-principles study
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10.1063/1.1641525
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    Affiliations:
    1 Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
    2 Materials Research and Development Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
    3 Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan
    4 Materials Research and Development Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
    5 Department of Advanced Materials Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
    6 Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
    J. Appl. Phys. 95, 2309 (2004); http://dx.doi.org/10.1063/1.1641525
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/content/aip/journal/jap/95/5/10.1063/1.1641525
2004-02-19
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effectiveness of BaZrO3 buffer layer in SmBa2Cu3Oy epitaxial growth on MgO substrate: A first-principles study
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/5/10.1063/1.1641525
10.1063/1.1641525
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