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Enhancement and anisotropy of the Landau g factor in modulation-doped heterostructures
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10.1063/1.1642732
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    Affiliations:
    1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China
    2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
    3 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
    4 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China
    5 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
    6 Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
    J. Appl. Phys. 95, 2473 (2004); http://dx.doi.org/10.1063/1.1642732
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/content/aip/journal/jap/95/5/10.1063/1.1642732
2004-02-19
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/5/10.1063/1.1642732
10.1063/1.1642732
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