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Effect of critical thickness on structural and optical properties of multiple quantum wells
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10.1063/1.1667010
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    Affiliations:
    1 Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080
    2 College of Materials Science and Engineering, Jilin University, Changchun 130023, China
    3 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
    4 Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China
    5 Beijing University of Technology, Beijing 100022, China
    J. Appl. Phys. 95, 4362 (2004); http://dx.doi.org/10.1063/1.1667010
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/content/aip/journal/jap/95/8/10.1063/1.1667010
2004-03-31
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of critical thickness on structural and optical properties of InxGa1−xN/GaN multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/95/8/10.1063/1.1667010
10.1063/1.1667010
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