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Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy
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10.1063/1.1760841
/content/aip/journal/jap/96/1/10.1063/1.1760841
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/1/10.1063/1.1760841
/content/aip/journal/jap/96/1/10.1063/1.1760841
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/content/aip/journal/jap/96/1/10.1063/1.1760841
2004-06-17
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/1/10.1063/1.1760841
10.1063/1.1760841
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