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Interdiffusion and structural change in an dots-in-a-well structure by rapid thermal annealing
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10.1063/1.1805191
/content/aip/journal/jap/96/10/10.1063/1.1805191
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/10/10.1063/1.1805191
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectrum at of the dots-in-well structure (as-grown sample) with five cycles of alternate source supply. Dashed lines denote the PL peaks from QDs and the intermediate layer, respectively. The inset is the schematic band diagram of the structure.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of the as-grown sample (a), the samples annealed at (b), and (c).

Image of FIG. 3.
FIG. 3.

PL spectra of the annealed samples at together with the as-grown sample.

Image of FIG. 4.
FIG. 4.

Temperature dependences of the PL peak energy (a) and the FWHM (b) for the as-grown and the annealed samples: as-grown sample (filled circles), the annealed sample at (open squares) and the annealed sample at (open triangles). The dashed lines indicate the band gap temperature dependences obtained by Varshni’s law using the parameters of .

Image of FIG. 5.
FIG. 5.

Integrated PL intensities for the as-grown and the annealed samples as a function of temperature: as-grown sample (filled circles), the annealed sample at (open squares) and the annealed sample at (open triangles). Symbols are the temperature dependences of the experimental results and the lines are fitting lines obtained by the conventional equation for thermal quenching.

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/content/aip/journal/jap/96/10/10.1063/1.1805191
2004-11-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/10/10.1063/1.1805191
10.1063/1.1805191
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