RHEED pictures showing the streaky patterns from (a) GaNAs and the spotty patterns from (b) GaNAsSb.
(004) XRD spectra showing the amount of strain in the samples. (a) , (b) , (c) , and (d) . (a) and (c) are grown under the device growth conditions, whereas (b) and (d) are grown under the device growth conditions.
SIMS depth profile of antimony and nitrogen for a sample.
PL results from the sample (barrier material for the QWs). The filled dots show the PL intensity. The empty dots show the peak PL wavelength.
SIMS results from the arsenic overpressure study. (a) Antimony composition and (b) nitrogen profile.
PL spectra from the sample grown at different arsenic-to-gallium overpressures. (a) , (b) , and (c) .
Reciprocal space map of the sample grown at a high temperature . No in-plane components from the QW are seen in the diffraction pattern.
SIMS results from the substrate temperature study. (a) Antimony composition and (b) nitrogen profile.
PL spectra from the sample grown at different substrate temperatures. (a) , (b) , and (c) . The small peak at is the water present in the testing environment.
Compilation of the long-wavelength edge-emitting GaAs lasers threshold current-lasing densities vs wavelength from literature. Utilizing the GaNAs barriers has allowed for the greatly reduced threshold current densities, as shown by the star data point.
XRD and SIMS compositional results of GaNAs and GaNAsSb grown under the normal 1.3 and device growth conditions.
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