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Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at
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10.1063/1.1807028
/content/aip/journal/jap/96/11/10.1063/1.1807028
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/11/10.1063/1.1807028

Figures

Image of FIG. 1.
FIG. 1.

RHEED pictures showing the streaky patterns from (a) GaNAs and the spotty patterns from (b) GaNAsSb.

Image of FIG. 2.
FIG. 2.

(004) XRD spectra showing the amount of strain in the samples. (a) , (b) , (c) , and (d) . (a) and (c) are grown under the device growth conditions, whereas (b) and (d) are grown under the device growth conditions.

Image of FIG. 3.
FIG. 3.

SIMS depth profile of antimony and nitrogen for a sample.

Image of FIG. 4.
FIG. 4.

PL results from the sample (barrier material for the QWs). The filled dots show the PL intensity. The empty dots show the peak PL wavelength.

Image of FIG. 5.
FIG. 5.

SIMS results from the arsenic overpressure study. (a) Antimony composition and (b) nitrogen profile.

Image of FIG. 6.
FIG. 6.

PL spectra from the sample grown at different arsenic-to-gallium overpressures. (a) , (b) , and (c) .

Image of FIG. 7.
FIG. 7.

Reciprocal space map of the sample grown at a high temperature . No in-plane components from the QW are seen in the diffraction pattern.

Image of FIG. 8.
FIG. 8.

SIMS results from the substrate temperature study. (a) Antimony composition and (b) nitrogen profile.

Image of FIG. 9.
FIG. 9.

PL spectra from the sample grown at different substrate temperatures. (a) , (b) , and (c) . The small peak at is the water present in the testing environment.

Image of FIG. 10.
FIG. 10.

Compilation of the long-wavelength edge-emitting GaAs lasers threshold current-lasing densities vs wavelength from literature. Utilizing the GaNAs barriers has allowed for the greatly reduced threshold current densities, as shown by the star data point.

Tables

Generic image for table
Table I.

XRD and SIMS compositional results of GaNAs and GaNAsSb grown under the normal 1.3 and device growth conditions.

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/content/aip/journal/jap/96/11/10.1063/1.1807028
2004-11-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/11/10.1063/1.1807028
10.1063/1.1807028
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