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Effect of a Ge interlayer on the high-temperature behavior of NiSi films
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10.1063/1.1810632
/content/aip/journal/jap/96/11/10.1063/1.1810632
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/11/10.1063/1.1810632
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of the sample annealed at 800 °C for 30 s.

Image of FIG. 2.
FIG. 2.

XRD patterns of the samples annealed at (a) 600 °C, (b) 850 °C, and (c) 9000 °C for 30 s.

Image of FIG. 3.
FIG. 3.

Sheet resistance of the and samples as a function of the annealing temperature.

Image of FIG. 4.
FIG. 4.

SEM images on the surfaces of samples after annealing at (a) 800 °C, (b) 850 °C, and (c) 900 °C.

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/content/aip/journal/jap/96/11/10.1063/1.1810632
2004-11-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of a Ge interlayer on the high-temperature behavior of NiSi films
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/11/10.1063/1.1810632
10.1063/1.1810632
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