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The origin of slow electron recombination processes in dye-sensitized solar cells with alumina barrier coatings
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10.1063/1.1812588
/content/aip/journal/jap/96/11/10.1063/1.1812588
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/11/10.1063/1.1812588
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transient absorption data monitoring the photoinduced absorption of the dye cation following optical excitation of the dye adsorbed on nanocrystalline films without (a) and with (b) overlayer coating, at different bias potentials shown in Volts V.

Image of FIG. 2.
FIG. 2.

Impedance spectra of illuminated dye-sensitized solar cells of -coated nanocrystalline at different steady states under galvanostatic (open circuit) conditions. Illumination at 0.1 sun and 0.05 sun (Xe lamp). Frequency values are indicated in .

Image of FIG. 3.
FIG. 3.

Parameters resulting from electrochemical impedance spectroscopy measurements of illuminated nanocrystalline dye-sensitized solar cells with uncoated and -coated at varying steady states under galvanostatic (zero current, open circuit) conditions. (a) open-circuit potential with respect to illumination intensity of lamp in suns, (b) charge-transfer resistance , (c) film (chemical) capacitance , and (d) (data points) response times, determined from the EIS data. Also shown in (d) (bold lines) are response times determined by open-circuit photovoltage decays for the uncoated and coated DSSCs.

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/content/aip/journal/jap/96/11/10.1063/1.1812588
2004-11-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The origin of slow electron recombination processes in dye-sensitized solar cells with alumina barrier coatings
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/11/10.1063/1.1812588
10.1063/1.1812588
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