Soft x-ray photoemission spectra of valence band region for a gate stack.
Combined photoemission (●) and inverse photoemission (엯); spectra of a gate stack.
X-ray diffraction data for four different layer thicknesses: 125, 250, 450, .
(a) Theoretical valence band density of states (DOS) for monoclinic , (b) photoemission spectra of thin film along with convoluted DOS, (c) theoretical conduction band DOS for monoclinic , and (d) inverse photoemission spectra of thin film along with convoluted DOS.
Simplified energy band diagram of gate stack (a) intrinsic (b) including band-tail states.
Combined PES and IPES spectra of (a) , (b) , and (c) .
SXPS spectra of Si region of (a) , (b) as-deposited , and (c) after FGA.
(a) Densities of states of monoclinic as determined by PES and IPES, the Gaussian peaks roughly model the presence of occupied and unoccupied band-tail/defect states in the vicinity of the VBM and CBM. (b) The fit between theoretical and experimental DOS improves after the band tail states subtracted from the measured DOS.
The electrostatic potential distribution across gate stack (a) as-deposited (b) after a forming gas anneal at .
XPS spectra of the C region of surface hydrocarbon contamination on substrates of different work functions.
The extracted values for band gap , electron affinity EA, conduction band offset CBO, valence band offset VBO, and the energy separation between Hf photelectron line and valence band maximum . Experiment/theory is determined by assuming perfect crystallinity while the effective values are extracted by including the band tail states (at the level). All values are in units of eV.
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