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Band alignment issues related to gate stacks
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10.1063/1.1803107
/content/aip/journal/jap/96/12/10.1063/1.1803107
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/12/10.1063/1.1803107

Figures

Image of FIG. 1.
FIG. 1.

Soft x-ray photoemission spectra of valence band region for a gate stack.

Image of FIG. 2.
FIG. 2.

Combined photoemission (●) and inverse photoemission (엯); spectra of a gate stack.

Image of FIG. 3.
FIG. 3.

X-ray diffraction data for four different layer thicknesses: 125, 250, 450, .

Image of FIG. 4.
FIG. 4.

(a) Theoretical valence band density of states (DOS) for monoclinic , (b) photoemission spectra of thin film along with convoluted DOS, (c) theoretical conduction band DOS for monoclinic , and (d) inverse photoemission spectra of thin film along with convoluted DOS.

Image of FIG. 5.
FIG. 5.

Simplified energy band diagram of gate stack (a) intrinsic (b) including band-tail states.

Image of FIG. 6.
FIG. 6.

Combined PES and IPES spectra of (a) , (b) , and (c) .

Image of FIG. 7.
FIG. 7.

SXPS spectra of Si region of (a) , (b) as-deposited , and (c) after FGA.

Image of FIG. 8.
FIG. 8.

(a) Densities of states of monoclinic as determined by PES and IPES, the Gaussian peaks roughly model the presence of occupied and unoccupied band-tail/defect states in the vicinity of the VBM and CBM. (b) The fit between theoretical and experimental DOS improves after the band tail states subtracted from the measured DOS.

Image of FIG. 9.
FIG. 9.

The electrostatic potential distribution across gate stack (a) as-deposited (b) after a forming gas anneal at .

Image of FIG. 10.
FIG. 10.

XPS spectra of the C region of surface hydrocarbon contamination on substrates of different work functions.

Tables

Generic image for table
Table I.

The extracted values for band gap , electron affinity EA, conduction band offset CBO, valence band offset VBO, and the energy separation between Hf photelectron line and valence band maximum . Experiment/theory is determined by assuming perfect crystallinity while the effective values are extracted by including the band tail states (at the level). All values are in units of eV.

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/content/aip/journal/jap/96/12/10.1063/1.1803107
2004-12-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/12/10.1063/1.1803107
10.1063/1.1803107
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