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Nanoscale-SiC doping for enhancing and in superconducting
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Image of FIG. 1.
FIG. 1.

The resistivity vs temperature in fields up to for the undoped (a) and SiC-doped (b) samples.

Image of FIG. 2.
FIG. 2.

The 90% of the resistive transition (upper critical field) as a function of the temperature for the undoped (A), the SiC-doped (B), the clean-limit, (C) and the Mg-vapor-treated (D) samples.

Image of FIG. 3.
FIG. 3.

The M–H loop at for the undoped sample (A) and the SiC-doped sample (B).

Image of FIG. 4.
FIG. 4.

A comparison of for the undoped (A), SiC-doped (B), the clean-limit (C), and the Mg-vapor-treated (D) samples at (a) and (b).

Image of FIG. 5.
FIG. 5.

The irreversibility field vs temperature for the samples A, B, C, and D.

Image of FIG. 6.
FIG. 6.

Conventional TEM image of an unreacted SiC particle, (b) high-resolution TEM image of the bulk of the SiC particle, and (c) EELS spectrum clearly showing the Si L- and the C K-edge.

Image of FIG. 7.
FIG. 7.

The EELS spectrum of amorphous (a) , (b) BC, and (c) detected in the SiC-doped .

Image of FIG. 8.
FIG. 8.

(a) The -contrast image of a typical grain in the [100] orientation, (b) high-resolution -contrast image of the bulk of the grain showing the Mg columns only, and (c) EELS spectrum of the B K edge from the grain.


Generic image for table
Table I.

Comparison of , resistivity, and irreversibility field data for samples A, B, C, D, and one literature sample (pure sintered pellet made from ).23


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale-SiC doping for enhancing Jc and Hc2 in superconducting MgB2