The resistivity vs temperature in fields up to for the undoped (a) and SiC-doped (b) samples.
The 90% of the resistive transition (upper critical field) as a function of the temperature for the undoped (A), the SiC-doped (B), the clean-limit, (C) and the Mg-vapor-treated (D) samples.
The M–H loop at for the undoped sample (A) and the SiC-doped sample (B).
A comparison of for the undoped (A), SiC-doped (B), the clean-limit (C), and the Mg-vapor-treated (D) samples at (a) and (b).
The irreversibility field vs temperature for the samples A, B, C, and D.
Conventional TEM image of an unreacted SiC particle, (b) high-resolution TEM image of the bulk of the SiC particle, and (c) EELS spectrum clearly showing the Si L- and the C K-edge.
The EELS spectrum of amorphous (a) , (b) BC, and (c) detected in the SiC-doped .
(a) The -contrast image of a typical grain in the  orientation, (b) high-resolution -contrast image of the bulk of the grain showing the Mg columns only, and (c) EELS spectrum of the B K edge from the grain.
Comparison of , resistivity, and irreversibility field data for samples A, B, C, D, and one literature sample (pure sintered pellet made from ).23
Article metrics loading...
Full text loading...