1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The relation between phase transformation and onset of thermal degradation in nanoscale -polycrystalline silicon structures
Rent:
Rent this article for
USD
10.1063/1.1815384
/content/aip/journal/jap/96/12/10.1063/1.1815384
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/12/10.1063/1.1815384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sheet resistance as a function of a Co-silicided polysilicon linewidth, where polysilicon is As doped. Sheet resistance is measured after RTP1 ( for ; diamond symbols) and after RTP2 ( for ; open symbols).

Image of FIG. 2.
FIG. 2.

Top view secondary electron images of Co-silicided, As-doped polysilicon lines having a width of (a) 85, (b) 45, and (c) . Alongside the polysilicon lines spacers are visible. Co silicide is formed with RTP2 at for . One can see no signs of degradation for the line, the onset of grain separation for the line, and complete separation in the case of a linewidth.

Image of FIG. 3.
FIG. 3.

Schematic representation of the FIB cross section along the length of the polysilicon structure.

Image of FIG. 4.
FIG. 4.

Bright-field image of an -wide Co-silicided (RTP2 at ; ) polysilicon (As-doped) line cross sectioned along the length. Pt on top of the was used as a contrast layer.

Image of FIG. 5.
FIG. 5.

(a) HAADF image of a line (B doped; RTP2 at for ) demonstrating the silicide agglomeration in terms of Si/silicide inversion; (b) Si, Co, O, and Pt energy dispersive x-ray mapping of the corresponding sample. Pt is used as a contrast layer.

Image of FIG. 6.
FIG. 6.

Sheet resistance as a function of Co-silicided polysilicon linewidth, where polysilicon is As doped. The Co silicide is formed using two-step RTP scheme: RTP1 at for and RTP2 at after: (a) 30; (b) 60; (c) 90; (d) 270, and (e) . All measurements correspond to the same wafer. Note the reduced transformation rate at the narrow linewidths.

Image of FIG. 7.
FIG. 7.

Average sheet resistance as a function of annealing time for the different linewidth groups (the average linewidths are indicated). The anneals are performed at . Note that the sheet resistance value in case of the line stays nearly constant, indicating that the transformation of CoSi into has virtually stopped.

Image of FIG. 8.
FIG. 8.

Representative top view secondary electron image of a Co-silicided polysilicon (As-doped) line having a width of approximately using RTP2 conditions of for . Alongside the polysilicon lines, spacers are visible. No signs of degradation were found.

Image of FIG. 9.
FIG. 9.

Bright-field image of a Co-silicided (RTP2 at ), As-doped polysilicon line (width ) cross sectioned along the length, showing the presence of CoSi grains. TiN was used as a capping layer. The subsurface voids might be attributed to sample preparation or the etching away of unconverted Co.

Image of FIG. 10.
FIG. 10.

Cumulative probability plots of sheet resistance of lines with and without nitrogen implantation through CoSi using different RTP2 conditions. TiN was used as a capping layer.

Loading

Article metrics loading...

/content/aip/journal/jap/96/12/10.1063/1.1815384
2004-12-02
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/12/10.1063/1.1815384
10.1063/1.1815384
SEARCH_EXPAND_ITEM