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Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with chemistry
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10.1063/1.1767979
/content/aip/journal/jap/96/3/10.1063/1.1767979
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/3/10.1063/1.1767979
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Refractive indices as a function of flow ratio in -added films; as-deposited and annealed at for in nitrogen ambient.

Image of FIG. 2.
FIG. 2.

Densities of as-deposited (, ) and annealed (, ) films as a function of flow ratio. The thermal annealing was performed at for in nitrogen ambient.

Image of FIG. 3.
FIG. 3.

Wet chemical etch rate of -added films in diluted (buffered oxide etching) solution as a function of flow ratio; as-deposited and annealed at for in ambient nitrogen.

Image of FIG. 4.
FIG. 4.

X-ray reflectivity profiles dissolved by incident angle in as-deposited (solid lines) and annealed (dotted lines) -added films with flow ratio of and .

Image of FIG. 5.
FIG. 5.

spectra of fluorine-incorporated films with varying flow ratio in a spectral range of . Several peaks corresponding to vibrational optical phonon modes were observed. The peaks assigned to a asymmetrical stretching band, a stretching band, a symmetrical stretching band, and a rocking band are centered at around and , respectively.

Image of FIG. 6.
FIG. 6.

Fluorine concentration obtained from spectra as a function of the flow ratio; as-deposited and annealed at for in ambient nitrogen.

Image of FIG. 7.
FIG. 7.

absorption bands of -added films with in flow ratio; (a) before and (b) after thermal annealing at for . The spectral peak data were deconvoluted by best-fit Gaussian distribution functions.

Image of FIG. 8.
FIG. 8.

stretching peak positions with various flow ratio in as-deposited and annealed -added films; (a) asymmetrical stretching vibration in phase and (b) symmetrical stretching vibration .

Image of FIG. 9.
FIG. 9.

bond angles dependent to fluorine concentration in films; as-deposited and annealed at for in ambient nitrogen. The bond angles were estimated by use of both Eq. (3) and the respective asymmetrical stretching mode frequency from the spectra.

Image of FIG. 10.
FIG. 10.

A typical absorption peak attributed to asymmetrical stretching vibrational modes. The peak was deconvoluted by three best-fit Gaussian distribution functions. The and asymmetrical stretching modes in phase and out-of phase, respectively. The and represent a transverse and longitudinal optical phonon mode, respectively.

Image of FIG. 11.
FIG. 11.

Peak area ratio of at to at as a function of flow ratio; as-deposited and annealed at for in ambient nitrogen. The and are asymmetrical stretching modes in phase and out-of phase, respectively. The and represent a transverse and longitudinal optical phonon mode, respectively.

Image of FIG. 12.
FIG. 12.

absorption spectra between and with different flow ratio in (a) as-deposited and (b) annealed -added films.

Image of FIG. 13.
FIG. 13.

Conceptual diagrams for the structural relaxation of the network with the formation of bonds and with the thermal treatment; (a) a strained lower-order ring structure in the undoped silicon dioxide film, (b) an open structure in the as-deposited -added films with incorporated fluorine atoms, and (c) a relaxed higher-order ring structure in the annealed -added film with incorporated fluorine atoms.

Image of FIG. 14.
FIG. 14.

depth profiles of fluorine for different flow ratios in (a) as-deposited and (b) annealed film stacks which were prepared by depositing each -added film of onto a thermally grown undoped of on a silicon wafer.

Image of FIG. 15.
FIG. 15.

Correlation between fluorine concentrations measured by two different methods of in units of atoms and of in units of in -added films.

Image of FIG. 16.
FIG. 16.

Binding energy distributions for (a) , (b) , and (c) in both a conventional (, ) and a -added (, ) films, which are obtained by ; The thermal annealing (, ) was carried out at for . Peak position for were upshifted by in (b) and (c).

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/content/aip/journal/jap/96/3/10.1063/1.1767979
2004-07-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/3/10.1063/1.1767979
10.1063/1.1767979
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