Refractive indices as a function of flow ratio in -added films; as-deposited and annealed at for in nitrogen ambient.
Densities of as-deposited (, ) and annealed (, ) films as a function of flow ratio. The thermal annealing was performed at for in nitrogen ambient.
Wet chemical etch rate of -added films in diluted (buffered oxide etching) solution as a function of flow ratio; as-deposited and annealed at for in ambient nitrogen.
X-ray reflectivity profiles dissolved by incident angle in as-deposited (solid lines) and annealed (dotted lines) -added films with flow ratio of and .
spectra of fluorine-incorporated films with varying flow ratio in a spectral range of . Several peaks corresponding to vibrational optical phonon modes were observed. The peaks assigned to a asymmetrical stretching band, a stretching band, a symmetrical stretching band, and a rocking band are centered at around and , respectively.
Fluorine concentration obtained from spectra as a function of the flow ratio; as-deposited and annealed at for in ambient nitrogen.
absorption bands of -added films with in flow ratio; (a) before and (b) after thermal annealing at for . The spectral peak data were deconvoluted by best-fit Gaussian distribution functions.
stretching peak positions with various flow ratio in as-deposited and annealed -added films; (a) asymmetrical stretching vibration in phase and (b) symmetrical stretching vibration .
bond angles dependent to fluorine concentration in films; as-deposited and annealed at for in ambient nitrogen. The bond angles were estimated by use of both Eq. (3) and the respective asymmetrical stretching mode frequency from the spectra.
A typical absorption peak attributed to asymmetrical stretching vibrational modes. The peak was deconvoluted by three best-fit Gaussian distribution functions. The and asymmetrical stretching modes in phase and out-of phase, respectively. The and represent a transverse and longitudinal optical phonon mode, respectively.
Peak area ratio of at to at as a function of flow ratio; as-deposited and annealed at for in ambient nitrogen. The and are asymmetrical stretching modes in phase and out-of phase, respectively. The and represent a transverse and longitudinal optical phonon mode, respectively.
absorption spectra between and with different flow ratio in (a) as-deposited and (b) annealed -added films.
Conceptual diagrams for the structural relaxation of the network with the formation of bonds and with the thermal treatment; (a) a strained lower-order ring structure in the undoped silicon dioxide film, (b) an open structure in the as-deposited -added films with incorporated fluorine atoms, and (c) a relaxed higher-order ring structure in the annealed -added film with incorporated fluorine atoms.
depth profiles of fluorine for different flow ratios in (a) as-deposited and (b) annealed film stacks which were prepared by depositing each -added film of onto a thermally grown undoped of on a silicon wafer.
Correlation between fluorine concentrations measured by two different methods of in units of atoms and of in units of in -added films.
Binding energy distributions for (a) , (b) , and (c) in both a conventional (, ) and a -added (, ) films, which are obtained by ; The thermal annealing (, ) was carried out at for . Peak position for were upshifted by in (b) and (c).
Article metrics loading...
Full text loading...