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Lucky drift impact ionization in amorphous semiconductors
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10.1063/1.1763986
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Affiliations:
1 Imaging Research, Sunnybrook and Women’s College Health Sciences Centre, University of Toronto, 2075 Bayview Avenue, Toronto, Ontario M4N 3M5, Canada
2 Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, D-35032 Marburg, Germany
3 Advanced Imaging Devices Research Division, NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-Ku, Tokyo 157-8510, Japan
J. Appl. Phys. 96, 2037 (2004)
/content/aip/journal/jap/96/4/10.1063/1.1763986
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1763986

## Figures

FIG. 1.

Comparison of multiplication versus field for (holes) (see Ref. 8) and (electrons) (see Ref. 25).

FIG. 2.

The semilogarithmic plot of the dependence of impact ionization coefficient on the reciprocal field for not only and , but, for comparison, also for various crystalline semiconductors. for holes and for electrons. The axis is a base-10 logarithm of in which is in . Data for from Akiyama et al. (see Ref. 25); electrons and holes from Tsuji et al. (see Ref. 12); holes from Juska and Araluskas (see Ref. 9) from which was obtained by reanalyzing their multiplication data. Data for crystalline semiconductors are for , Logan and White (see Ref. 38); , Ghin et al. (see Ref. 39); , Plimmer et al. (see Ref. 40); , Cook et al. (see Ref. 41); , Lee et al. (see Ref. 42); (calculation only), Bulutay (see Ref. 43). Electrons in (Tsuji et al. 12); electrons in (Akiyama et al. 25); and holes in (Tsuji et al. 12); holes in (Juska and Arlauskas9).

FIG. 3.

The temperature dependence of the IIC for . The numbers next to the lines represent the activation energies from the slopes in eV. Data extracted from Tsuji et al. (see Ref. 12). Field is in : ; ; ;; ; ; . Filled in points are for electrons.

FIG. 4.

Analysis of hole IIC versus data for . The best line represents Eq. (8) with a constant . (), (), and () curves represent typical analysis based on . (a) , , , , , or (a) , , , , . (b) , , , , . (c) , , , , .

FIG. 5.

Typical density of states for an amorphous semiconductor and proposed possible impact ionization processes (I and II).

FIG. 6.

Semilogarithmic plot of the hole IIC vs reciprocal field for , experimental data and typical curve fits. Examples of curve fits using an energy dependent analysis of hole IIC vs data for . Best curve fits based on . In all cases . , Experimental data; , (a) , , , ; , (b) , , , ; , (c) , , , ; , (d) , , , .

FIG. 7.

Semilogarithmic plot of the hole IIC vs reciprocal field for , experimental data and two typical curve fits using two different . Energy dependent analyses of hole IIC vs data using . Curve fits are , solid curve, , , , , ; , dashed curve, , , , , .

FIG. 8.

Semilogarithmic plot of the electron IIC vs reciprocal field for , experimental data and examples of curve fits. , Experimental data; , (a) , field dependent , , , , , , ; , (b) , energy dependent , , , , , ; , (c) , energy and field dependent , , , , , , , , at ; , (d) , energy and field dependent , , , , , ; , at .

FIG. 9.

Semilogarithmic plot of the electron IIC vs reciprocal field for , experimental data and typical examples of curve fits. , Experimental points (from : in Fig. 2); , best line (exponential dependence); , (a) , field dependent , , , , , ; , (b) , field dependent , , , , , , ; , (c) , field dependent , , , , , , .

## Tables

Table I.

Hole impact ionization in . Summary of data analysis.

/content/aip/journal/jap/96/4/10.1063/1.1763986
2004-08-02
2014-04-17

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