1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Lucky drift impact ionization in amorphous semiconductors
Rent:
Rent this article for
USD
10.1063/1.1763986
/content/aip/journal/jap/96/4/10.1063/1.1763986
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1763986

Figures

Image of FIG. 1.
FIG. 1.

Comparison of multiplication versus field for (holes) (see Ref. 8) and (electrons) (see Ref. 25).

Image of FIG. 2.
FIG. 2.

The semilogarithmic plot of the dependence of impact ionization coefficient on the reciprocal field for not only and , but, for comparison, also for various crystalline semiconductors. for holes and for electrons. The axis is a base-10 logarithm of in which is in . Data for from Akiyama et al. (see Ref. 25); electrons and holes from Tsuji et al. (see Ref. 12); holes from Juska and Araluskas (see Ref. 9) from which was obtained by reanalyzing their multiplication data. Data for crystalline semiconductors are for , Logan and White (see Ref. 38); , Ghin et al. (see Ref. 39); , Plimmer et al. (see Ref. 40); , Cook et al. (see Ref. 41); , Lee et al. (see Ref. 42); (calculation only), Bulutay (see Ref. 43). Electrons in (Tsuji et al. 12); electrons in (Akiyama et al. 25); and holes in (Tsuji et al. 12); holes in (Juska and Arlauskas9).

Image of FIG. 3.
FIG. 3.

The temperature dependence of the IIC for . The numbers next to the lines represent the activation energies from the slopes in eV. Data extracted from Tsuji et al. (see Ref. 12). Field is in : ; ; ;; ; ; . Filled in points are for electrons.

Image of FIG. 4.
FIG. 4.

Analysis of hole IIC versus data for . The best line represents Eq. (8) with a constant . (), (), and () curves represent typical analysis based on . (a) , , , , , or (a) , , , , . (b) , , , , . (c) , , , , .

Image of FIG. 5.
FIG. 5.

Typical density of states for an amorphous semiconductor and proposed possible impact ionization processes (I and II).

Image of FIG. 6.
FIG. 6.

Semilogarithmic plot of the hole IIC vs reciprocal field for , experimental data and typical curve fits. Examples of curve fits using an energy dependent analysis of hole IIC vs data for . Best curve fits based on . In all cases . , Experimental data; , (a) , , , ; , (b) , , , ; , (c) , , , ; , (d) , , , .

Image of FIG. 7.
FIG. 7.

Semilogarithmic plot of the hole IIC vs reciprocal field for , experimental data and two typical curve fits using two different . Energy dependent analyses of hole IIC vs data using . Curve fits are , solid curve, , , , , ; , dashed curve, , , , , .

Image of FIG. 8.
FIG. 8.

Semilogarithmic plot of the electron IIC vs reciprocal field for , experimental data and examples of curve fits. , Experimental data; , (a) , field dependent , , , , , , ; , (b) , energy dependent , , , , , ; , (c) , energy and field dependent , , , , , , , , at ; , (d) , energy and field dependent , , , , , ; , at .

Image of FIG. 9.
FIG. 9.

Semilogarithmic plot of the electron IIC vs reciprocal field for , experimental data and typical examples of curve fits. , Experimental points (from : in Fig. 2); , best line (exponential dependence); , (a) , field dependent , , , , , ; , (b) , field dependent , , , , , , ; , (c) , field dependent , , , , , , .

Tables

Generic image for table
Table I.

Hole impact ionization in . Summary of data analysis.

Loading

Article metrics loading...

/content/aip/journal/jap/96/4/10.1063/1.1763986
2004-08-02
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lucky drift impact ionization in amorphous semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1763986
10.1063/1.1763986
SEARCH_EXPAND_ITEM