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Short channel effects in regioregular poly(thiophene) thin film transistors
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10.1063/1.1766411
/content/aip/journal/jap/96/4/10.1063/1.1766411
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1766411
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diagram of a coplanar transistor.

Image of FIG. 2.
FIG. 2.

characteristics of an -based on glass with and . (a) Transfer characteristics in the saturation regime at and . (b) Output characteristics at several gate voltages (squares) and the computed (solid line) characteristics for the device with and .

Image of FIG. 3.
FIG. 3.

characteristics of an -based on glass with and . (a) Transfer characteristics in the saturation regime at and . (b) Output characteristics (squares) at several gate voltages and the computed (solid line) characteristics for the device with and .

Image of FIG. 4.
FIG. 4.

characteristics of an -based on thermal oxide with and . (a) Transfer characteristics in the saturation region at . (b) Output characteristics (squares) at several gate voltages and calculated (solid line) characteristics for the device with and .

Image of FIG. 5.
FIG. 5.

Hysteresis of the transfer characteristics of -based on glass in the saturation regime. Devices were measured at and the gate voltage was swept from the off to on region and back at . (a) with channel length of . (b) with channel length of .

Image of FIG. 6.
FIG. 6.

Plot of the temperature dependence of the saturation mobility of a -based on thermal oxide with channel length of .

Image of FIG. 7.
FIG. 7.

Plot of fit of thermal model (see text) to the output characteristics of the -based with channel length of from Fig. 3. Squares indicate the experimental data and the solid line represents the model.

Image of FIG. 8.
FIG. 8.

Diagram of coplanar transistor with a channel and a bulk conduction region.

Image of FIG. 9.
FIG. 9.

Plot of current with respect to voltage for a film of between coplanar gold contacts with a width of 1 mm and a length of . The solid line represents a fit to a space charge limited current model.

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/content/aip/journal/jap/96/4/10.1063/1.1766411
2004-08-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Short channel effects in regioregular poly(thiophene) thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1766411
10.1063/1.1766411
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