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Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
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10.1063/1.1767619
/content/aip/journal/jap/96/4/10.1063/1.1767619
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1767619
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic picture of the DG SOI MOSFET structure.

Image of FIG. 2.
FIG. 2.

(a) Distribution of the electrostatic potential in the DG SOI MOSFET with , at and . b) Cross sections of the electrostatic potential from panel (a).

Image of FIG. 3.
FIG. 3.

(a) The electron density in the channel region at and . (b) The linear electron density in the channel at different values of the applied drain voltage .

Image of FIG. 4.
FIG. 4.

(a) Effective potential for the lowest inversion subband as a function of for various and . (b) Effective potential as a function of for and .

Image of FIG. 5.
FIG. 5.

Current-voltage characteristics of the DG SOI MOSFET with : (a) for different channel thicknesses at ; (b) for and different applied gate voltages.

Image of FIG. 6.
FIG. 6.

Current-voltage characteristics of the DG SOI MOSFET for different channel thicknesses. (a) , (b) .

Image of FIG. 7.
FIG. 7.

Gray scale maps of the absolute value of the partial Wigner distribution function at , for devices with [panels (a) and (b)], [panels (c) and (d)]; [panels (a) and (c)] and [panels (b) and (d)].

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/content/aip/journal/jap/96/4/10.1063/1.1767619
2004-08-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1767619
10.1063/1.1767619
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