Schematic picture of the DG SOI MOSFET structure.
(a) Distribution of the electrostatic potential in the DG SOI MOSFET with , at and . b) Cross sections of the electrostatic potential from panel (a).
(a) The electron density in the channel region at and . (b) The linear electron density in the channel at different values of the applied drain voltage .
(a) Effective potential for the lowest inversion subband as a function of for various and . (b) Effective potential as a function of for and .
Current-voltage characteristics of the DG SOI MOSFET with : (a) for different channel thicknesses at ; (b) for and different applied gate voltages.
Current-voltage characteristics of the DG SOI MOSFET for different channel thicknesses. (a) , (b) .
Gray scale maps of the absolute value of the partial Wigner distribution function at , for devices with [panels (a) and (b)], [panels (c) and (d)]; [panels (a) and (c)] and [panels (b) and (d)].
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