1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
Rent:
Rent this article for
USD
10.1063/1.1769089
/content/aip/journal/jap/96/4/10.1063/1.1769089
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1769089
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The simulated SNWT structures in this work. (a) A schematic graph of an intrinsic SNWT with arbitrary cross sections (for clarity, the substrate is not shown here). (b) The grid used in the simulation of SNWTs. (c) The cross sections of the simulated triangular wire (TW), rectangular wire (RW), and cylindrical wire (CW) FETs. is the silicon body thickness, is the silicon body width, and is the wire width. For the TW, the direction normal to each gate is ⟨111⟩, so the channel is ⟨101⟩ oriented. In contrast, for the channel of the RW, both ⟨101⟩ and ⟨100⟩ orientations are possible. For the CW, we assume the channel to be ⟨100⟩ oriented.

Image of FIG. 2.
FIG. 2.

The 2D modes [the square of the modulus of the electron wave functions in the (010) valleys] in a slice of (a) triangular wire (TW), (b) rectangular wire (RW), and (c) cylindrical wire (CW) transistors. For clarity, the substrates for TW and RW FETs are not shown here.

Image of FIG. 3.
FIG. 3.

The electron subband profile in a cylindrical SNWT with gate length ( and ). The numbers of nodes in the direction is equal to 128. The silicon body thickness [as shown in Fig. 1(c)] is , and the oxide thickness is . The source∕drain doping concentration is and the channel is undoped (the channel region is located from ). The solid lines are for the approximation method (solving a 2D Schrödinger equation only once) used in the FUMS approach, while the circles are for the rigorous calculation (solving 2D Schrödinger equations times) adopted in the UMS and CMS approaches.

Image of FIG. 4.
FIG. 4.

The vs curves for a cylindrical SNWT in logarithm (left) and linear (right) scales . The device structure is the same as that in Fig. 3. The crosses are for the CMS approach, the circles are for the UMS approach, and the dashed lines are for the FUMS approach.

Image of FIG. 5.
FIG. 5.

The computed LDOS [in ] and electron subbands (dashed lines) of a ballistic cylindrical SNWT with gate length and Si body thickness (the channel region is located from to and the details of the device geometry are described in Fig. 3 caption) ( and ).

Image of FIG. 6.
FIG. 6.

The 1D electron density profile along the channel of the simulated cylindrical SNWT (the channel region is located from to and the details of the device geometry are described in Fig. 3 caption). The solid line is for while the dashed line is for ( and ).

Image of FIG. 7.
FIG. 7.

The transmission coefficient and electron subbands in the simulated cylindrical SNWT (the channel region is located from to and the details of the device geometry are described in Fig. 3 caption) ( and ).

Image of FIG. 8.
FIG. 8.

The vs curves for the triangular wire (TW) FET with ⟨101⟩ oriented channels, rectangular wire (RW) FET with ⟨101⟩ oriented channels and cylindrical wire (CW) FET with ⟨100⟩ oriented channels. . All the SNWTs have the same silicon body thickness , oxide thickness , gate length , and gate work function . The Si body width of the RW is . In the calculation of the TW and RW FETs, whose channels are ⟨101⟩ oriented, the effective masses of electrons in the (100) and (001) valleys are obtained from Ref. 22 as , , and .

Image of FIG. 9.
FIG. 9.

A generic plot of the 1D device lattice (solid line with dots, along the direction) for a SNWT with the Büttiker probes attached. Each probe is treated as a virtual 1D lattice (dashed line with dots, along the direction) that is coupled to a node in the device lattice. The coupling energy between this virtual lattice and the node with which it is attached to is , and that between two adjacent device lattice nodes is . The probe Fermi levels are labeled as .

Image of FIG. 10.
FIG. 10.

The computed LDOS [in ] and electron subbands (dashed lines) of a dissipative cylindrical SNWT with gate length and Si body thickness (the channel region is located from to and the details of the device geometry are described in Fig. 3 caption). ( and ). The mobility is and the channel mobility is .

Image of FIG. 11.
FIG. 11.

The vs curves for a cylindrical SNWT with gate length and Si body thickness (the details of the device geometry are described in Fig. 3 caption) in logarithm (left) and linear (right) scales . The dashed lines are for the ballistic limit while the solid lines are for the case with scattering [i.e., the mobility is and the channel mobility is ].

Loading

Article metrics loading...

/content/aip/journal/jap/96/4/10.1063/1.1769089
2004-08-02
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1769089
10.1063/1.1769089
SEARCH_EXPAND_ITEM