The variations in the film thickness as a function of the number of cycles on bare , and . Data for films using as oxidant (open square) were also included for comparison.
The variation of grown oxide film thickness as a function of the -oxidation time at various temperatures.
(a) The variations in the film thickness on various wafers as a function of the number of cycles after , (b) the changes in thickness of the various samples after .
(a) The variations in the thickness of the films, (b) the variations in the increased thickness, (c) the variations in the layer thickness ( thickness) on the various substrates as a function of the number of cycles during postannealing.
(a) , (b), (c) spectra of the as-deposited films grown on the four types of wafers.
The variations in the CET values as a function of the number of deposition cycles of the as-deposited and postannealed films grown on (a) bare , (b) , (c) and (d) .
The variations in values of the as-grown films as a function of the layer thickness. The numbers in the figure show the dielectric constant calculated from the slopes of each graph.
vs leakage current density of the films on bare , and after postannealing.
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