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Atomic-layer-deposited thin films with thin layers grown by in situ oxidation
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View: Figures


Image of FIG. 1.
FIG. 1.

The variations in the film thickness as a function of the number of cycles on bare , and . Data for films using as oxidant (open square) were also included for comparison.

Image of FIG. 2.
FIG. 2.

The variation of grown oxide film thickness as a function of the -oxidation time at various temperatures.

Image of FIG. 3.
FIG. 3.

(a) The variations in the film thickness on various wafers as a function of the number of cycles after , (b) the changes in thickness of the various samples after .

Image of FIG. 4.
FIG. 4.

(a) The variations in the thickness of the films, (b) the variations in the increased thickness, (c) the variations in the layer thickness ( thickness) on the various substrates as a function of the number of cycles during postannealing.

Image of FIG. 5.
FIG. 5.

(a) , (b), (c) spectra of the as-deposited films grown on the four types of wafers.

Image of FIG. 6.
FIG. 6.

The variations in the CET values as a function of the number of deposition cycles of the as-deposited and postannealed films grown on (a) bare , (b) , (c) and (d) .

Image of FIG. 7.
FIG. 7.

The variations in values of the as-grown films as a function of the layer thickness. The numbers in the figure show the dielectric constant calculated from the slopes of each graph.

Image of FIG. 8.
FIG. 8.

vs leakage current density of the films on bare , and after postannealing.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situO3 oxidation