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Electrical activation in silicon-on-insulator after low energy boron implantation
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10.1063/1.1769095
/content/aip/journal/jap/96/4/10.1063/1.1769095
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1769095
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

UT-MARLOWE ion profile simulations for implants at , , , . Note location of surface interface for , , and SOI.

Image of FIG. 2.
FIG. 2.

Percent retained dose of boron in surface Si layer as function of implant energy for , , and SOI. Calculated using UT-MARLOWE ion profiles.

Image of FIG. 3.
FIG. 3.

Isothermal Hall data for , , at including (a) active dose, (b) hole mobility, and (c) sheet resistance.

Image of FIG. 4.
FIG. 4.

Isothermal Hall data for , , at including (a) active dose, (b) hole mobility, and (c) sheet resistance.

Image of FIG. 5.
FIG. 5.

Comparison of sheet resistance data measured by four-point probe and Hall effect for (a) , (b) , and (c) , annealed at . Solid symbols and lines represent four-point probe measurements and open symbols represent Hall measurements.

Image of FIG. 6.
FIG. 6.

Isochronal Hall data for , , after annealing for showing (a) active dose, (b) hole mobility, and (c) sheet resistance.

Image of FIG. 7.
FIG. 7.

Isochronal Hall data for , , after annealing for showing (a) active dose, (b) hole mobility, and (c) sheet resistance.

Image of FIG. 8.
FIG. 8.

Boron concentration profiles from SIMS for SOI implanted at , then annealed at . Note segregation of boron into buried oxide.

Image of FIG. 9.
FIG. 9.

Clustered dose in SOI and bulk Si for , , annealed at . Dose was obtained by integrating the B concentration profiles that lie above a level of .

Image of FIG. 10.
FIG. 10.

Active fraction of boron in SOI and bulk for , annealed for .

Image of FIG. 11.
FIG. 11.

Carbon and oxygen SIMS profiles for SOI and bulk Si implanted with , , , and annealed at for .

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/content/aip/journal/jap/96/4/10.1063/1.1769095
2004-08-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical activation in silicon-on-insulator after low energy boron implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1769095
10.1063/1.1769095
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