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Influences of the spacer layer growth temperature on multilayer quantum dot structures
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10.1063/1.1773378
/content/aip/journal/jap/96/4/10.1063/1.1773378
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1773378
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark field (200) cross-sectional TEM images of DWELL samples with (a) and without (b) the high growth temperature spacer layers.

Image of FIG. 2.
FIG. 2.

AFM images (inset) and histograms obtained from different dot layers for different growth conditions: (a) and (b) are the first and fifth layers, respectively, of a structure grown with HGTSLs, (c) and (d) the second and fifth layers, respectively, of structures grown without HGTSLs. The AFM image size is .

Image of FIG. 3.
FIG. 3.

AFM images of the surface morphology prior to the deposition of the second layer of QDs for structures with (a) and without (b) the high growth temperature spacer layer.

Image of FIG. 4.
FIG. 4.

The temperature dependence of the threshold current density under continuous-wave operation of a QD laser incorporating the HGTSLs and with uncoated facets. Lasing spectra at RT and are shown in the insets.

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/content/aip/journal/jap/96/4/10.1063/1.1773378
2004-08-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/4/10.1063/1.1773378
10.1063/1.1773378
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