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Transient photovoltage in as measured by atomic force microscope tip
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10.1063/1.1774245
/content/aip/journal/jap/96/5/10.1063/1.1774245
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/5/10.1063/1.1774245
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram showing the band bending and the vacuum level near the surface of in vicinity of the metal tip.

Image of FIG. 2.
FIG. 2.

Schematic diagram showing the band bending near the surface of in dark (a) and after UV light pulse (b). Electrons are shown with solid circles and holes—with empty circles. The Fermi level is shown as the same for electrons and holes in nonequilibrium case (b) in assumption that recombination in bulk is much faster than recombination over the barrier, and concentration of traps in the depletion region is much less than density of the surface states.

Image of FIG. 3.
FIG. 3.

Transients of photovoltage, calculated using Eq. (8) with , , , and varied from 0.4 to . Typical experimental transient is shown for comparison.

Image of FIG. 4.
FIG. 4.

Photovoltage after illumination with a single pulse of UV light as a function of the excitation intensity.

Image of FIG. 5.
FIG. 5.

Transient of photovoltage, , after pulse of UV light, attenuated (1) and (2) times. Solid curves—calculated using Eq. (8) with , and (1) and (2).

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/content/aip/journal/jap/96/5/10.1063/1.1774245
2004-09-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient photovoltage in GaN as measured by atomic force microscope tip
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/5/10.1063/1.1774245
10.1063/1.1774245
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