Schematic diagram showing the band bending and the vacuum level near the surface of in vicinity of the metal tip.
Schematic diagram showing the band bending near the surface of in dark (a) and after UV light pulse (b). Electrons are shown with solid circles and holes—with empty circles. The Fermi level is shown as the same for electrons and holes in nonequilibrium case (b) in assumption that recombination in bulk is much faster than recombination over the barrier, and concentration of traps in the depletion region is much less than density of the surface states.
Transients of photovoltage, calculated using Eq. (8) with , , , and varied from 0.4 to . Typical experimental transient is shown for comparison.
Photovoltage after illumination with a single pulse of UV light as a function of the excitation intensity.
Transient of photovoltage, , after pulse of UV light, attenuated (1) and (2) times. Solid curves—calculated using Eq. (8) with , and (1) and (2).
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