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Influence of dielectric capping layers on the crystallization kinetics of films
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Image of FIG. 1.
FIG. 1.

Temperature dependence of the sheet resistance of films for samples measured immediately after deposition (open symbols) and one day after deposition (solid symbols).

Image of FIG. 2.
FIG. 2.

Temperature dependence of sheet resistance upon annealing single layer of film and films covered with different protective layers having a thickness of . The different protective layers are indicated inside the individual graphs Curves of (a) and (b) were obtained using a heating rate of and , respectively.

Image of FIG. 3.
FIG. 3.

Temperature dependence of sheet resistance for of films covered with (a) and (b) measured at different heating rates. The heating rates are shown in the inset. The solid line represents the fit for electronic transport with an energy barrier

Image of FIG. 4.
FIG. 4.

Kissinger plots from which the activation energy of the amorphous to crystalline transition at is determined. Plots of a single layer of film (star) and film covered with thick protective layers of (open circles) and (solid squares) are presented. The lines show the linear fit.


Generic image for table
Table I.

Activation energy for electronic transport for different capping layers and heating rates.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films