Bright field micrographs and the corresponding diffraction patterns for (a) undoped film (sample ), and for the -doped films; (b) sample , (c) sample . Insets show the corresponding selected area diffraction patterns. rings are designated as reflections from the following planes: , , , , . The faint innermost rings seen in all samples can be indexed to a thin surface oxide layer.
Normalized junction resistances as a function of temperature for a set of four junctions with the same structure: -doped () where is the oxidation time used for the barrier layer.
(a) TMR measured for a junction sample with the structure: -doped and (b) corresponding VSM hysteresis loop of a planar trilayer film deposited simultaneously with the junction.
Deposition conditions, film thickness, saturation magnetization recorded at , coercivity (for easy axis, e.a., and hard axis, h.a.) and identified crystalline phases for a set of six single films.
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