Schematic illustration of our cantilever beam magnetometer using a lock-in assisted capacitance technique (right) to detect the substrate deflection; epitaxial configuration and orthogonal crystal axes of the hexagonal MnAs film deposited onto the GaAs(001) cantilever beam substrate are indicated.
Stress evolution upon applying perpendicular magnetic fields , measured by CBM: (a) , initial magnetization direction is easy axis along the cantilever beam length, magnetizing field is applied perpendicular to the film plane ( axis of MnAs); increasing (decreasing) denoted by open (filled) dots. (b) , initial magnetization direction is easy axis along the cantilever beam length, magnetizing field is applied in the film plane along the cantilever beam width ( axis of MnAs). (c) with easy axes parallel to length and width of the cantilever beam (see Ref. 33); initial magnetization direction is along the cantilever beam length, magnetizing field is applied in the film plane along the cantilever beam width.
Magnetic field dependence of the torque effect in cantilever beam experiments calculated by Eq. (14).
Method of separating the magnetoelastic coupling from torque effects in cantilever beam experiments, where the film magnetization is rotated out of the film plane (see Sec. IV C for details): Curves 1 and 2 correspond to the involved stress change when the magnetizing field is tilted by and against the film normal, respectively. Adding curves 1 and 2 and dividing the results by 2 eliminate torque effects and yield the magnetoelastic stress as a function of plotted as curve 3; note that curve 3 reveals the same field dependence of the stress as the curve in Fig. 2(b).
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