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Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress
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10.1063/1.1781767
/content/aip/journal/jap/96/6/10.1063/1.1781767
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/6/10.1063/1.1781767
/content/aip/journal/jap/96/6/10.1063/1.1781767
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/content/aip/journal/jap/96/6/10.1063/1.1781767
2004-09-02
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/6/10.1063/1.1781767
10.1063/1.1781767
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