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Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress
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10.1063/1.1781767
/content/aip/journal/jap/96/6/10.1063/1.1781767
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/6/10.1063/1.1781767

Figures

Image of FIG. 1.
FIG. 1.

Schematics of type 1 and type 2 structures: (a) thick layer, (b) B film ( of monolayer), (c) thick layer and (d) thick cap of Si (only type 1).

Image of FIG. 2.
FIG. 2.

Depth concentration profiles of B in layers grown at on a Si(100) substrate (Type 1 structures): (squares), (circles), (triangles).

Image of FIG. 3.
FIG. 3.

Coefficient of incorporation of B during the growth of layers at . Variations with Ge concentration for different biaxial stress conditions: layers in compression (full squares), unstressed layers (full circles), layer in tension (open square). The error bars take into account the uncertainty on for type 2 structures.

Image of FIG. 4.
FIG. 4.

Variations of the B segregation coefficient at and of the B diffusion coefficient at (D) in layers vs stress and Ge concentration. The stress is expressed as the difference between the Ge composition (at. %) of the layer of interest and the Ge composition of the layer used as epitaxial substrate. The segregation coefficient is deduced from the coefficient of incorporation presented in Fig. 3. The diffusion coefficient is expressed using as unity. Given the limited number of points, the shape of isosegregation curves cannot be determined. Points with equivalent segregation coefficient are thus joined with dashed lines. The grey zone in the upper part of the diagram indicates a (concentration-stress) zone, where no segregation of B is expected. Considering the former comments on isosegregation curves, its border has a very speculative character.

Image of FIG. 5.
FIG. 5.

Depth concentration profiles of B in an unstressed layer before (full line) and after (triangles) annealing at during . The simulated profile allowing the measurement of the lattice diffusion coefficient is given for comparison (open circles).

Image of FIG. 6.
FIG. 6.

Lattice diffusion coefficient of B at vs Ge concentration in layers under compression (full squares) and unstressed (full circles). The error bar presented corresponds to the maximum error due to SIMS measurements. It takes into account the variations of the height and the width of profiles measured in the same sample (layer inhomogeneity and SIMS reproducibility).

Image of FIG. 7.
FIG. 7.

Lattice diffusion coefficient of B at vs biaxial pressure in layers. The error bar presented corresponds to the maximum error due to SIMS measurements. It takes into account the variations of the height and the width of profiles measured in the same sample (layer inhomogeneity and SIMS reproducibility).

Tables

Generic image for table
Table I.

Lattice diffusion coefficient of B at in layers with different Ge concentrations and stress states.

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/content/aip/journal/jap/96/6/10.1063/1.1781767
2004-09-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/6/10.1063/1.1781767
10.1063/1.1781767
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