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Coulomb blockade and negative differential conductance in metallic double-dot devices
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10.1063/1.1782954
/content/aip/journal/jap/96/6/10.1063/1.1782954
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/6/10.1063/1.1782954
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current diagram of the device.

Image of FIG. 2.
FIG. 2.

Stability diagrams of the devices without [(a) and (c): ] and with (b) and (d): and ] cross couplings for two cases: weak interdot coupling [(a) and (b): ] and strong interdot coupling [(c) and (d): ]. Everywhere, , , , and .

Image of FIG. 3.
FIG. 3.

Stability diagrams of the devices with asymmetrical dot-to-lead couplings (a) [ and and symmetrical dot-to-lead couplings (b) . Everywhere, , , , , and .

Image of FIG. 4.
FIG. 4.

Diagram cell dimensions of Eqs. (2) and (3) for the devices (a) without cross couplings and (b) with cross couplings . Everywhere, , , and .

Image of FIG. 5.
FIG. 5.

Current vs bias (a) and current vs gate voltage (b) for devices with different (from top); 0, 1, and 10 [, , , and ].

Image of FIG. 6.
FIG. 6.

Monte Carlo simulation conductance fits to the charging diagram from Fig. 3(a) for the device with the same capacitances as those in Ref. 1: , , , , , , and . Bright regions correspond to the low-conductance regime .

Image of FIG. 7.
FIG. 7.

NDC in dependence on (a) temperature, (b) offset charge, (c) gate (direct) couplings, and (d) cross couplings .

Image of FIG. 8.
FIG. 8.

Example of a second Coulomb gap and its destruction by an offset charge.

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/content/aip/journal/jap/96/6/10.1063/1.1782954
2004-09-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coulomb blockade and negative differential conductance in metallic double-dot devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/6/10.1063/1.1782954
10.1063/1.1782954
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