Schematic of the sample layout. The two-dimensional electron gas is located in the strained layer. The semiconductor mesa is defined by reactive ion etching. The electrodes make contact at the sidewalls of the mesa.
Differential resistance vs bias voltage for a interface at different temperatures.
Differential resistance as a function of the bias voltage for a interface. The measurements are performed at several temperatures in the range.
Normalized differential resistance vs bias current of interface for several magnetic fields. .
Calculated normalized differential resistance as a function of the bias voltage according to the model.1 Parameters of the model1 are: ; ; and .
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