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Damage and recovery in arsenic doped silicon after high energy implantation
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Image of FIG. 1.
FIG. 1.

Deactivated carrier concentration after high energy implantation at different doses as a function of the initial carrier concentration . Lines show the behavior according to Eq. (1).

Image of FIG. 2.
FIG. 2.

Carrier concentration vs logarithm annealing time at of the most heavily As doped samples . The symbols refer to: reference undamaged sample and sample implanted at with a dose .

Image of FIG. 3.
FIG. 3.

Carrier density vs annealing time at of samples doped with As at different concentrations. The symbols refer to reference undamaged sample , sample implanted with dose , and sample implanted with dose .

Image of FIG. 4.
FIG. 4.

Trapped electron vs annealing time at after implantation at different doses for samples with carrier concentration: (a) and (b) .

Image of FIG. 5.
FIG. 5.

Amount of trapped electrons vs isothermal annealing time at increasing temperatures for samples with initial carrier concentration: (left) and (right).

Image of FIG. 6.
FIG. 6.

Comparison of the electron amount still trapped in the defects after annealing at 600, 650, and for samples irradiated with the same dose of , but at two different irradiation temperatures. The measurements refer to samples with similar initial carrier concentrations: and (closed symbols) and and (open symbols). It is shown that the increase of the irradiation temperature gives rise to a relevant increase of the trapped carrier density.


Generic image for table
Table I.

Total dopant concentration , initial carrier density , electrically active As fraction , residual carrier density after irradiation , deactivated carrier concentration , and percentual decrease of the carrier density . Samples in columns 1, 3, 4, and 6 were irradiated at , while the ones in 2, 5, and 7 at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage and recovery in arsenic doped silicon after high energy Si+ implantation