Deactivated carrier concentration after high energy implantation at different doses as a function of the initial carrier concentration . Lines show the behavior according to Eq. (1).
Carrier concentration vs logarithm annealing time at of the most heavily As doped samples . The symbols refer to: reference undamaged sample and sample implanted at with a dose .
Carrier density vs annealing time at of samples doped with As at different concentrations. The symbols refer to reference undamaged sample , sample implanted with dose , and sample implanted with dose .
Trapped electron vs annealing time at after implantation at different doses for samples with carrier concentration: (a) and (b) .
Amount of trapped electrons vs isothermal annealing time at increasing temperatures for samples with initial carrier concentration: (left) and (right).
Comparison of the electron amount still trapped in the defects after annealing at 600, 650, and for samples irradiated with the same dose of , but at two different irradiation temperatures. The measurements refer to samples with similar initial carrier concentrations: and (closed symbols) and and (open symbols). It is shown that the increase of the irradiation temperature gives rise to a relevant increase of the trapped carrier density.
Total dopant concentration , initial carrier density , electrically active As fraction , residual carrier density after irradiation , deactivated carrier concentration , and percentual decrease of the carrier density . Samples in columns 1, 3, 4, and 6 were irradiated at , while the ones in 2, 5, and 7 at .
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