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Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers
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10.1063/1.1789627
/content/aip/journal/jap/96/8/10.1063/1.1789627
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1789627
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The reciprocal space map for (0008) reflection of the 4H-SiC sample with thick epilayer deposited on undoped substrate. The contours are plotted at 7% increments.

Image of FIG. 2.
FIG. 2.

-lattice parameter change of 4H-SiC vs Al-doping concentration. Points represent experimental data. The line was obtained by the least squares fit.

Image of FIG. 3.
FIG. 3.

Degree of tilt between the basal planes of epilayer and the substrate vs Al-doping concentration. Points correspond to experimental tilt angles with line obtained from the formula (7) and experimental values of lattice misfit.

Image of FIG. 4.
FIG. 4.

The reciprocal space map for (0008) reflection of the sample with thick epilayer deposited on undoped substrate.

Image of FIG. 5.
FIG. 5.

(a) Plan-view TEM image of the epilayer doped with . The short lines correspond to threading dislocations with estimated density of . (b) Cross-sectional TEM image of the same epilayer showing the epi/substrate interface.

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/content/aip/journal/jap/96/8/10.1063/1.1789627
2004-10-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1789627
10.1063/1.1789627
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