The reciprocal space map for (0008) reflection of the 4H-SiC sample with thick epilayer deposited on undoped substrate. The contours are plotted at 7% increments.
-lattice parameter change of 4H-SiC vs Al-doping concentration. Points represent experimental data. The line was obtained by the least squares fit.
Degree of tilt between the basal planes of epilayer and the substrate vs Al-doping concentration. Points correspond to experimental tilt angles with line obtained from the formula (7) and experimental values of lattice misfit.
The reciprocal space map for (0008) reflection of the sample with thick epilayer deposited on undoped substrate.
(a) Plan-view TEM image of the epilayer doped with . The short lines correspond to threading dislocations with estimated density of . (b) Cross-sectional TEM image of the same epilayer showing the epi/substrate interface.
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