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Spectroscopic method of strain analysis in semiconductor quantum-well devices
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10.1063/1.1791754
/content/aip/journal/jap/96/8/10.1063/1.1791754
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1791754

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the geometry of a CB laser soldered onto a heat sink. A wide SC-device, as a segment of a CB, is marked (left). Device-specific axes are illustrated, with along the 110 direction. (b) Schematic of a setup that serves for application of a uniaxial stress in the 110-direction. (c) Schematic diagram of a setup that serves for application of biaxially-symmetric, in-plane strain to SC-device. If the cylindrical Piezo device, on top of which the device is fixed by conductive epoxy, expands longitudinally (dotted cylinder) the stop surface and, hence, the SC-device, is compressed biaxially.

Image of FIG. 2.
FIG. 2.

Transition energy shifts as a function of packaging-induced strain along the 110-direction for the case of zero intrinsic strain. A linear fit is reasonable for packaging-induced strain values of up to about 0.20%, and different slopes must be used for compressive and tensile packaging-induced strain. transition, compression, squares; transition, compression, triangles; transition, tension, diamonds; transition, tension, circles.

Image of FIG. 3.
FIG. 3.

Energy shift per strain coefficients for QW interband transitions as a function of packaging-induced strain. The coefficients are defined as the shift in energy per packaging-induced strain along 110-direction, or axis. (a) Energy shift coefficients for compressive, packaging-induced strain. transition, squares; transition, circles. (b) Energy shift coefficients for tensile, packaging-induced strain. transition, squares; transition, circles.

Image of FIG. 4.
FIG. 4.

Spectral position of the transition (a) and the transition (b) versus induced strain in the 110-direction. The open and closed circles refer to different experiments with different devices (reproducibility test). The lines correspond to different model calculations. The three models are: (1) no QCSE, solid line; (2) QCSE included, dashed line; (3) QCSE with shielding included, dotted line. The shielding factor is 0.302.

Image of FIG. 5.
FIG. 5.

—coefficient for the transition as a function of induced strain along the 110-direction, extracted from the data in Fig. 4(b). The heavy solid line is the best fit to the data. The other lines refer to different model calculations: no QCSE, solid line; QCSE included, dashed line; QCSE with shielding included, dotted line. The strain range of interest for packaging-induced strain is 0.0% to .

Image of FIG. 6.
FIG. 6.

Shift of the spectral positions of the transition (open circles) and transition (full circles) versus the magnitude of the in-plane, biaxially symmetric strain for a SC-device waveguide. The in-plane strain is compressive. The lines correspond to the theoretical results for the transition (dashed) and the transition (solid).

Image of FIG. 7.
FIG. 7.

Emission energy of a SC device versus induced, compressive, hydrostatic strain (circles). The solid line is the theoretical prediction for hydrostatic strain in this case.

Image of FIG. 8.
FIG. 8.

The spectral positions of the (a) and transitions (b) as a function of position along two CBs from the same batch. One CB is soldered onto a copper heat sink (fill squares or circles), and the other onto a diamond heat spreader (open squares or circles). The maximum shift in energy from the unstrained energy is the bowing factor .

Tables

Generic image for table
Table I.

Applied stress along [110] with biaxially symmetric, in-plane intrinsic strain .

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/content/aip/journal/jap/96/8/10.1063/1.1791754
2004-10-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spectroscopic method of strain analysis in semiconductor quantum-well devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1791754
10.1063/1.1791754
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