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SAD pattern of the (a) as-prepared and (b) annealed NbN films deposited on the Si substrate.
Normalized resistance versus temperature (R-T) dependences of the films grown on the as-deposited NbN (curve a) and preannealed NbN layers (curve b).
TEM micrograph of the film grown on the NbN-buffered Si substrate.
SAD pattern of the interface.
MMMA losses from intergranular weak links and moving vortices measured on the thin films.
(a) Magneto-optical image of the film. Bright areas represent high magnetic induction. White rectangles denote two different areas that were used for the determination of the (b) Transport critical current density at the temperature of for the film on the NbN-buffered Si substrate as a function of magnetic field.
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