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Electrical and structural properties of films prepared by sequential deposition of B and Mg on the NbN-buffered Si(100) substrate
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10.1063/1.1794357
/content/aip/journal/jap/96/8/10.1063/1.1794357
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1794357
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SAD pattern of the (a) as-prepared and (b) annealed NbN films deposited on the Si substrate.

Image of FIG. 2.
FIG. 2.

Normalized resistance versus temperature (R-T) dependences of the films grown on the as-deposited NbN (curve a) and preannealed NbN layers (curve b).

Image of FIG. 3.
FIG. 3.

TEM micrograph of the film grown on the NbN-buffered Si substrate.

Image of FIG. 4.
FIG. 4.

SAD pattern of the interface.

Image of FIG. 5.
FIG. 5.

MMMA losses from intergranular weak links and moving vortices measured on the thin films.

Image of FIG. 6.
FIG. 6.

(a) Magneto-optical image of the film. Bright areas represent high magnetic induction. White rectangles denote two different areas that were used for the determination of the (b) Transport critical current density at the temperature of for the film on the NbN-buffered Si substrate as a function of magnetic field.

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/content/aip/journal/jap/96/8/10.1063/1.1794357
2004-10-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and structural properties of MgB2 films prepared by sequential deposition of B and Mg on the NbN-buffered Si(100) substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1794357
10.1063/1.1794357
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