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InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers
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10.1063/1.1794898
/content/aip/journal/jap/96/8/10.1063/1.1794898
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1794898
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band profiles, energy levels, and selected wave function components for one period of the mid-IR “W” active region designed for emission at .

Image of FIG. 2.
FIG. 2.

Conduction and valence band in-plane dispersion relations for the tensile (dashed) and compressively strained (solid) dilute-N W laser structures.

Image of FIG. 3.
FIG. 3.

Optical gain vs carrier density for the structures with tensile (dashed) and compressive (solid) strain in the hole QW, along with results for a representative antimonide W structure (dotted).

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/content/aip/journal/jap/96/8/10.1063/1.1794898
2004-10-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/8/10.1063/1.1794898
10.1063/1.1794898
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