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Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress
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10.1063/1.1775299
/content/aip/journal/jap/96/9/10.1063/1.1775299
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1775299

Figures

Image of FIG. 1.
FIG. 1.

Full width half-maximum vs voltage modulation for the temperature values 2, 4.2, and .

Image of FIG. 2.
FIG. 2.

IET spectra for the modulation voltage values 0.8, 1, 2, and at the temperature for an junction.

Image of FIG. 3.
FIG. 3.

Full width half-maximum vs temperature for voltage modulation values 0.5, 1, 2, and .

Image of FIG. 4.
FIG. 4.

IET spectra for the modulation voltage value 0.8 at the temperature values 2 and for an junction.

Image of FIG. 5.
FIG. 5.

Aluminum phonons spectra (100) at low energy. In the insert, IET spectrum obtained by Klein with an tunneling junction (see Ref. 28).

Image of FIG. 6.
FIG. 6.

Silicon phonons spectrum of an junction for (100) and (111) silicon orientation.

Image of FIG. 7.
FIG. 7.

Deconvolution of silicon phonon modes for an doped with phosphorus [silicon orientation (111)].

Image of FIG. 8.
FIG. 8.

Deconvolution of silicon phonon modes [silicon orientation (100)] for an (a) doped with phosphorus, (b) doped with arsenic.

Image of FIG. 9.
FIG. 9.

Deconvolution in separated modes of vibration band on (100) silicon orientation for an .

Image of FIG. 10.
FIG. 10.

Deconvolution in separated modes of vibration band on (111) silicon orientation for an .

Image of FIG. 11.
FIG. 11.

IET spectra of phonon modes after and before electrical stresses. The curves labeled are: 1, initial; 2, after CVS, , ; 3, after CVS , ; 4, after warm-up, ; 5, later; 6, after CVS, , ; 7, after CVS, , ; 8, after CVS, , . The stress and measurements shown are on the same sample with the electrical stress being cumulative.

Image of FIG. 12.
FIG. 12.

Modification of phonon mode energy positions induced by electrical stresses.

Tables

Generic image for table
Table I.

Characteristic energy of silicon phonons for the (111) orientation.

Generic image for table
Table II.

Characteristic energy (in mV) of silicon phonons for the (100) orientation.

Generic image for table
Table III.

Characteristics energy of phonons.

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/content/aip/journal/jap/96/9/10.1063/1.1775299
2004-10-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1775299
10.1063/1.1775299
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