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Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress
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10.1063/1.1775299
/content/aip/journal/jap/96/9/10.1063/1.1775299
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1775299
/content/aip/journal/jap/96/9/10.1063/1.1775299
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/content/aip/journal/jap/96/9/10.1063/1.1775299
2004-10-28
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1775299
10.1063/1.1775299
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