Full width half-maximum vs voltage modulation for the temperature values 2, 4.2, and .
IET spectra for the modulation voltage values 0.8, 1, 2, and at the temperature for an junction.
Full width half-maximum vs temperature for voltage modulation values 0.5, 1, 2, and .
IET spectra for the modulation voltage value 0.8 at the temperature values 2 and for an junction.
Aluminum phonons spectra (100) at low energy. In the insert, IET spectrum obtained by Klein with an tunneling junction (see Ref. 28).
Silicon phonons spectrum of an junction for (100) and (111) silicon orientation.
Deconvolution of silicon phonon modes for an doped with phosphorus [silicon orientation (111)].
Deconvolution of silicon phonon modes [silicon orientation (100)] for an (a) doped with phosphorus, (b) doped with arsenic.
Deconvolution in separated modes of vibration band on (100) silicon orientation for an .
Deconvolution in separated modes of vibration band on (111) silicon orientation for an .
IET spectra of phonon modes after and before electrical stresses. The curves labeled are: 1, initial; 2, after CVS, , ; 3, after CVS , ; 4, after warm-up, ; 5, later; 6, after CVS, , ; 7, after CVS, , ; 8, after CVS, , . The stress and measurements shown are on the same sample with the electrical stress being cumulative.
Modification of phonon mode energy positions induced by electrical stresses.
Characteristic energy of silicon phonons for the (111) orientation.
Characteristic energy (in mV) of silicon phonons for the (100) orientation.
Characteristics energy of phonons.
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