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Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
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10.1063/1.1787624
/content/aip/journal/jap/96/9/10.1063/1.1787624
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1787624
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Fitting the GPC curve with functions .

Image of FIG. 2.
FIG. 2.

RBS and XRF results for ALD from and at 300 °C on hydrogen-terminated silicon (100): (a) the experimental growth curve and (b) the corresponding GPC curve. In addition to the points shown in (a), RBS data points were acquired at 800 and 2000 cycles, giving zirconium contents of 980 and , respectively, and average GPC values of 1.23 and , marked by triangles in (b). Trend lines have been added to be used in the growth mode simulations.

Image of FIG. 3.
FIG. 3.

XRF and ICP-OES results for ALD from and at 300 °C on hydrogen-terminated silicon (100): (a) the experimental growth curve and (b) the corresponding GPC curve. Trend lines have been added to be used in the growth mode simulations.

Image of FIG. 4.
FIG. 4.

LEIS spectra for deposited on -terminated silicon. The number of ALD reaction cycles is as indicated. Spectra have been shifted vertically for clarity.

Image of FIG. 5.
FIG. 5.

Results of the LEIS measurements for : (a) linear dependency between the Zr and Si signals, (b) the calculated surface fractions and as a function of the number of ALD reaction cycles, and (c) the surface fractions as a function of coverage. “2d” refers to two-dimensional growth. In (c), the upper axes show the amount of deposited, , and the average film thickness assuming . The LEIS points are plotted at coverage points obtained from the trend line of Fig. 2.

Image of FIG. 6.
FIG. 6.

LEIS spectra for deposited on -terminated silicon: (a) the spectra and (b) example of the fitting procedure for the 25-cycle sample. In (a), spectra have been shifted vertically for clarity. The number of ALD reaction cycles is as indicated. Reference spectra measured for and powder samples are also shown.

Image of FIG. 7.
FIG. 7.

Results of the LEIS measurements for : (a) linear dependency between the Al and Si signal areas, (b) the calculated surface fractions and as a function of the number of ALD reaction cycles, and (c) the surface fractions as a function of coverage. “2d” refers to two-dimensional growth. In (c), the upper axes show the amount of deposited, , and the average film thickness assuming . The LEIS points are plotted at coverage points obtained from the trend line of Fig. 3.

Image of FIG. 8.
FIG. 8.

Cross-sectional TEM image for deposited in 60 cycles at 300 °C on hydrogen-terminated silicon, pretreated with at 300 °C for 5 min. Reoxidation of the silicon substrate has taken place due to exposure to ambient air.

Image of FIG. 9.
FIG. 9.

Cross-sectional TEM image for deposited in the process at 300 °C on hydrogen-terminated silicon in (a) 15 reaction cycles, (b) 20 reaction cycles, and (c) 30 reaction cycles. The samples were capped in situ with silicon.

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/content/aip/journal/jap/96/9/10.1063/1.1787624
2004-10-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1787624
10.1063/1.1787624
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