In situ Macor™ sample support holder (a) side and (b) top view. The leads and the mask were made of tungsten and the heat sinks were tantalum. The other components are SiC, and Molybdenum.
Re pattern after deposition through the TLM shadow mask. Contact regions are labeled , , , and Pad. The width and spacing of each contact are shown in micrometers.
Example curves for the contacts a) as-deposited and b) after annealing at for in vacuum. The data shown are for the measurements between contacts and on Si-rich sample 11.
TLM test structure and a plot of total resistance as a function of contact spacing, d. Typical values might be: , , (should be as small as possible), and .27
Depth profiles for carbon (—▴—), silicon (—엯—), and rhenium (—∎—) a) as-deposited and b) annealed on silicon-rich SiC sample 12.
Phase diagrams for Re–Si (Ref. 15) and Re–C equilibrium. The Re–C data were generated from the JCPDS files in the JADE XRD software package.
Isothermal section of the Re–Si–C phase diagram calculated for (Ref. 37).
Conditions for Re deposition. Silicon-rich samples were prepared by depositing Si on a stoichiometric SiC surface. Silicon was deposited on the entire SiC surface on samples 11 and 13 but was deposited through the TLM mask for sample 12 .
Average for linear regression fits of current-voltage data for the as-deposited and annealed contacts. The change in value shows whether the contacts became more (positive) or less (negative) ohmic with annealing. An * indicates that electrical measurement was not possible due to a poor adhesion/degradation of the Re film.
Linear correlation and slope for the regression fit of TLM data per sample both as-deposited and after annealing.
Specific contact resistance, , calculated from the TLM analysis for both the as-deposited and annealed samples.
Enthalpy and entropy of formation at , and for different species of the Re–Si–C system (Ref. 38).
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