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Rhenium ohmic contacts on 6H-SiC
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    + View Affiliations - Hide Affiliations
    1 Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
    2 and Air Force Reasearch Laboratory/Materials and Manufacturing Dictorate, Wright Patterson Air Force Base, Ohio, 45433–7707
    3 Air Force Research Laboratory/Materials and Manufacturing Directorate, Wright Patterson Air Force Base, Ohio 45433-7707
    4 Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
    a) Present address: ENSCO Inc/GeoSystems Solutions Division, Melbourne, Florida 32940; electronic mail: mcdaniel.gavin@ensco.com
    b) Present address: U.S. Army Research Office, Research Triangle Park, North Carolina 27709–2211.
    J. Appl. Phys. 96, 5357 (2004); http://dx.doi.org/10.1063/1.1797550


Image of FIG. 1.
FIG. 1.

In situ Macor™ sample support holder (a) side and (b) top view. The leads and the mask were made of tungsten and the heat sinks were tantalum. The other components are SiC, and Molybdenum.

Image of FIG. 2.
FIG. 2.

Re pattern after deposition through the TLM shadow mask. Contact regions are labeled , , , and Pad. The width and spacing of each contact are shown in micrometers.

Image of FIG. 3.
FIG. 3.

Example curves for the contacts a) as-deposited and b) after annealing at for in vacuum. The data shown are for the measurements between contacts and on Si-rich sample 11.

Image of FIG. 4.
FIG. 4.

TLM test structure and a plot of total resistance as a function of contact spacing, d. Typical values might be: , , (should be as small as possible), and .27

Image of FIG. 5.
FIG. 5.

Depth profiles for carbon (—▴—), silicon (—엯—), and rhenium (—∎—) a) as-deposited and b) annealed on silicon-rich SiC sample 12.

Image of FIG. 6.
FIG. 6.

Phase diagrams for Re–Si (Ref. 15) and Re–C equilibrium. The Re–C data were generated from the JCPDS files in the JADE XRD software package.

Image of FIG. 7.
FIG. 7.

Isothermal section of the Re–Si–C phase diagram calculated for (Ref. 37).


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Table I.

Conditions for Re deposition. Silicon-rich samples were prepared by depositing Si on a stoichiometric SiC surface. Silicon was deposited on the entire SiC surface on samples 11 and 13 but was deposited through the TLM mask for sample 12 .

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Table II.

Average for linear regression fits of current-voltage data for the as-deposited and annealed contacts. The change in value shows whether the contacts became more (positive) or less (negative) ohmic with annealing. An * indicates that electrical measurement was not possible due to a poor adhesion/degradation of the Re film.

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Table III.

Linear correlation and slope for the regression fit of TLM data per sample both as-deposited and after annealing.

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Table IV.

Specific contact resistance, , calculated from the TLM analysis for both the as-deposited and annealed samples.

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Table V.

Enthalpy and entropy of formation at , and for different species of the Re–Si–C system (Ref. 38).


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Scitation: Rhenium ohmic contacts on 6H-SiC