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Raman study of outgassing and damage induced by ion implantation in -doped
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10.1063/1.1803615
/content/aip/journal/jap/96/9/10.1063/1.1803615
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1803615

Figures

Image of FIG. 1.
FIG. 1.

Raman signature of reference unannealed material (a) and vacuum annealed samples during at (b), (c), (d) and (e). The solid lines are the sum of the fitted LOPC (dashed lines), TO phonon, and LO phonon (dots) bands.

Image of FIG. 2.
FIG. 2.

Relative integrated area of the measured LO phonon and the LOPC mode as a function of annealing temperature, with the corresponding depletion depth calculated from Eq. (1). The data associated with designate the unannealed material.

Image of FIG. 3.
FIG. 3.

Room temperature Raman spectra of implanted at with tilt angles set to (a) and (b).

Image of FIG. 4.
FIG. 4.

Room temperature Raman spectra of implanted at with tilt angles set to (a) and (b).

Image of FIG. 5.
FIG. 5.

Room temperature Raman spectra of implanted at with ion beam oriented at (a) and (b) with respect to the surface normal.

Tables

Generic image for table
Table I.

Depletion layer depths deduced from the measured areas ratios in ion implanted with tilt angles set to and , and projected range of implanted ion calculated using SRIM 2003 simulations.

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/content/aip/journal/jap/96/9/10.1063/1.1803615
2004-10-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/96/9/10.1063/1.1803615
10.1063/1.1803615
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