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Thermally induced diffusion in and quantum wells grown by solid source molecular beam epitaxy
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10.1063/1.1825632
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    Affiliations:
    1 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Singapore
    2 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore
    3 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Singapore
    4 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore
    a) Electronic mail: esfyoon@ntu.edu.sg
    J. Appl. Phys. 97, 013506 (2005); http://dx.doi.org/10.1063/1.1825632
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/content/aip/journal/jap/97/1/10.1063/1.1825632
2004-12-07
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally induced diffusion in GaInNAs∕GaAs and GaInAs∕GaAs quantum wells grown by solid source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/1/10.1063/1.1825632
10.1063/1.1825632
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