(a) The change in the Ga and In contents at the QW center for different group-III diffusion lengths . The inset shows the Ga compositional profiles across the growth direction , where is at the center of the QW layer. (b) The in-plane strain vs at the (i) center of QW, (ii) well region, close to the interface, and (iii) barrier region. (c) The calculated and of the and QWs vs .
Comparison of the PL spectra for GaInNAs, and GaInAs QWs after annealing at (a) , (b) , and (c) . The inset shows the XRD measurements of the as-grown QW-structure, and the annealed QW-structure at for .
PL energy shift of QW and QW vs annealing time at fixed temperatures of 630 and , respectively.
The diffusion coefficients, , of (a) QW, and (b) QW at varying annealing temperature and time. The best-fitted curves are obtained using the Arrhenius equation.
QW-structure used in the annealing experiments and theoretical modeling of this study.
The material parameters for GaAs, InAs, GaN, and InN, which are used in the theoretical calculations of the and QWs. The parameters are compiled and calculated from Refs. 19, 31, and references herein.
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