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Thermally induced diffusion in and quantum wells grown by solid source molecular beam epitaxy
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10.1063/1.1825632
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Singapore
    2 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore
    3 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Singapore
    4 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore
    a) Electronic mail: esfyoon@ntu.edu.sg
    J. Appl. Phys. 97, 013506 (2005); http://dx.doi.org/10.1063/1.1825632
/content/aip/journal/jap/97/1/10.1063/1.1825632
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/1/10.1063/1.1825632

Figures

Image of FIG. 1.
FIG. 1.

(a) The change in the Ga and In contents at the QW center for different group-III diffusion lengths . The inset shows the Ga compositional profiles across the growth direction , where is at the center of the QW layer. (b) The in-plane strain vs at the (i) center of QW, (ii) well region, close to the interface, and (iii) barrier region. (c) The calculated and of the and QWs vs .

Image of FIG. 2.
FIG. 2.

Comparison of the PL spectra for GaInNAs, and GaInAs QWs after annealing at (a) , (b) , and (c) . The inset shows the XRD measurements of the as-grown QW-structure, and the annealed QW-structure at for .

Image of FIG. 3.
FIG. 3.

PL energy shift of QW and QW vs annealing time at fixed temperatures of 630 and , respectively.

Image of FIG. 4.
FIG. 4.

The diffusion coefficients, , of (a) QW, and (b) QW at varying annealing temperature and time. The best-fitted curves are obtained using the Arrhenius equation.

Tables

Generic image for table
Table I.

QW-structure used in the annealing experiments and theoretical modeling of this study.

Generic image for table
Table II.

The material parameters for GaAs, InAs, GaN, and InN, which are used in the theoretical calculations of the and QWs. The parameters are compiled and calculated from Refs. 19, 31, and references herein.

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/content/aip/journal/jap/97/1/10.1063/1.1825632
2004-12-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally induced diffusion in GaInNAs∕GaAs and GaInAs∕GaAs quantum wells grown by solid source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/1/10.1063/1.1825632
10.1063/1.1825632
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