MR measurements for a exchange biased spin valve structure as the AFM layer thickness is reduced from 2.8 nm to 0.4 nm by argon ion milling.
(Top) A schematic showing an array of wires patterned in the AFM layer of a exchange biased spin valve. (Bottom) MR measurements for the spin valve structure when the IrMn layer has been patterned into an array of 3 μm wide wires with 1.5 and 6 μm spacing.
(a) Schematic diagram of the mathematical model. is the direction of the exchange bias, and is the ferromagnetic region between the IrMn wires. The applied field is along the length of the wires. (b) Schematic diagram showing the orientation of the magnetic moments within region , with respect to the exchange field in an applied field .
The change in the GMR as the exchange bias is reduced according to the energy minimization model, where , 300 nm, and 400 nm. A constant applied field of was used.
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